Description :

������ Features
1. Wide receiving angle
2. Linear response vs. irradiance
3. Fast switching time
4. End-looking Package ideal for space
limited applications
5. Lens Appearance: Water clear
6. This product don't contained restriction
substance, compliance RoHS standard.
������ Description
The BPD-BQA331 device consists
of a PIN silicon photodiode molded in
a black epoxy package which allows
spectral response from visible to
infrared light wavelengths. The wide
receiving angleprovides relatively even
reception over a large area. The
end-looking package is designed for
easy PC board mounting. This photodiode
is mechanically and spectrally matched to
BRIGHT’s GaAs and GaAlAs series of infrared
emitting diodes.

Specification :

������ Absolute Maximum Ratings(Ta=25℃)
Parameter Maximum Rating Unit
Power Dissipation 100 mW
Reverse Breakdown Voltage 60V
Operating Temperature -40℃~+85℃
Storage Temperature Range -45℃~+100℃
Lead Soldering Temperature 260℃ for 5 seconds

������ Electrical Characteristics (TA=25℃ unless otherwise noted)
PARAMETER SYM
BOL MIN TYP MAX UNITS TEST CONDITIONS
Reverse Light Current IL - 25 - μA VR=5V.Ee=1mW/cm2
Reverse Dark Current ID - - 30 nA VR=10V.Ee=0 mW/cm2
Reverse Break down Voltage V(BR) 30 - - V IR=100μA
Forward Voltage VF - - 1.2 V IF=1mA
Total Capacitance CT - 5 - PF VR=5V.Ee=0,f=1.0MHZ
Rise Time/ Fall Time tr/tf - 10 - ns VR=20V,λ=850nm.RL=50Ω